PDTA123JE,115 datasheet

Маркировка

PDTA123JE,115
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PDTA123JE,115 Collector- Emitter Voltage Vceo Max: 50 V Configuration: Single Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): 1?µA Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 5V ID_COMPONENTS: 1947829 Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Peak Dc Collector Current: 100 mA Power - Max: 150mW Resistor - Base (r1) (ohms): 2.2K Resistor - Emitter Base (r2) (ohms): 47K Transistor Polarity: PNP Transistor Type: PNP - Pre-Biased Typical Input Resistor: 2.2 KOhm Typical Resistor Ratio: 0.047 Vce Saturation (max) @ Ib, Ic: 100mV @ 250?µA, 5mA Voltage - Collector Emitter Breakdown (max): 50V Product Category: Transistors Switching - Resistor Biased RoHS: yes Collector- Emitter Voltage VCEO Max: 50 V Peak DC Collector Current: 100 mA Factory Pack Quantity: 3000 Part # Aliases: PDTA123JE T/R Other Names: 934051580115, PDTA123JE T/R
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17 шт.
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